FNK12N12T

FNK N-Channel Enhancement Mode Power MOSFET Description TheFNK12N12T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK12N12T General Features ● VDS =120V,ID =120A RDS(ON) < 7.2mΩ @ VGS=10V (Typ:5.8mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply TO-247 top view Package Marking and Ordering Information Device Marking Device Device Package FNK12N12T FNK12N12T TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage ...