FNK3328E

20V N-Channel MOSFET General Description The FNK3328E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V while retaining a 12V VGS(MAX) rating.This device is suitable for use as load switch and general purpose FET application. Product Summary VDS (V) = 20V ID = 10A (VGS = 4.5V) RDS(ON) < 9mΩ (VGS = 4.5V) RDS(ON) < 12mΩ (VGS = 2.5V) FNK3328E D G S V2#W$(3ÿ2(Uÿ%$(ÿQ!!$3(T4(&ÿ Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 10 9.2 40 3.1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 30 65 20 ...