N-Channel Power MOSFET
FNK6A
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK6A uses advanced trench technology to provide exc...
Description
FNK6A
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK6A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
D1 G1
G2
D2
General Features
● VDS = 19.5V,ID = 5A RDS(ON) <23mΩ @ VGS=2.5V RDS(ON) < 16mΩ @ VGS=4.5V
S1 S2 Schematic diagram
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Application
●Battery protection ●Load switch ●Power management
Marking and pin Assignment
SOT23-6L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
FNK6A
FNK6A
SOT23-6L
Reel Size Ø180mm
Tape width 8mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (N...
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