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FNK6A

FNK

N-Channel Power MOSFET

FNK6A FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6A uses advanced trench technology to provide exc...


FNK

FNK6A

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Description
FNK6A FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. D1 G1 G2 D2 General Features ● VDS = 19.5V,ID = 5A RDS(ON) <23mΩ @ VGS=2.5V RDS(ON) < 16mΩ @ VGS=4.5V S1 S2 Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●Battery protection ●Load switch ●Power management Marking and pin Assignment SOT23-6L top view Package Marking And Ordering Information Device Marking Device Device Package FNK6A FNK6A SOT23-6L Reel Size Ø180mm Tape width 8mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (N...




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