FNK10N02C

FNK10N02C FNK N-Channel Enhancement Mode Power MOSFET Description The FNK10N02C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =100A RDS(ON) <3.3m Ω @ VGS=10V (Typ2.5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Load switching ● Uninterruptible power supply TO-251 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width FNK10N02C FNK10N02C TO-251 - - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Limit 20 ±12 Drain Current-Con...