FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK03N06E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK03N06E
General Features
● VDS =30V,ID =80A RDS(ON) <5.9mΩ @ VGS=10V RDS(ON) <7.5mΩ @ VGS=5V
● High density cell design for ultra low Rdson ● ...
