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P60NS04Z Datasheet, Equivalent, STP60NS04Z.STP60NS04Z STP60NS04Z |
　
　
　
| Part | P60NS04Z |
|---|---|
| Description | STP60NS04Z |
| Feature | STP60NS04Z
N-CHANNEL CLAMPED 10mΩ - 60 A TO-220 FULLY PROTECTED MESH OVERLAYâ„ ¢ MOSFET
TYPE
VDSS
RDS(on)
ID
STP6 0NS04Z CLAMPED <0. 015 Ω 60 A s TYPIC AL RDS(on) = 0. 010 Ω s 100% AVALANCHE TESTED s LOW CAPACITANCE AND GATE CHAR GE s 175 oC MAXIMUM JUNCTION TEMPERATUR E DESCRIPTION This fully clamped Mosfe t is produced by using the latest advan ced Company’s Mesh Overlay process wh ich is based on a novel strip layout. T he inherent benefits of the new technol ogy coupled with the extra clamping cap abilities make this product particularl y suitable for the harshest operation c onditions such as those . |
| Manufacture | STMicroelectronics |
| Datasheet |
| Part | P60NS04Z |
|---|---|
| Description | STP60NS04Z |
| Feature | STP60NS04Z
N-CHANNEL CLAMPED 10mΩ - 60 A TO-220 FULLY PROTECTED MESH OVERLAYâ„ ¢ MOSFET
TYPE
VDSS
RDS(on)
ID
STP6 0NS04Z CLAMPED <0. 015 Ω 60 A s TYPIC AL RDS(on) = 0. 010 Ω s 100% AVALANCHE TESTED s LOW CAPACITANCE AND GATE CHAR GE s 175 oC MAXIMUM JUNCTION TEMPERATUR E DESCRIPTION This fully clamped Mosfe t is produced by using the latest advan ced Company’s Mesh Overlay process wh ich is based on a novel strip layout. T he inherent benefits of the new technol ogy coupled with the extra clamping cap abilities make this product particularl y suitable for the harshest operation c onditions such as those . |
| Manufacture | STMicroelectronics |
| Datasheet |
　
　
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