Silicon Rectifier. 1A4 Datasheet

1A4 Rectifier. Datasheet pdf. Equivalent

Part 1A4
Description Chip Silicon Rectifier
Feature Chip Silicon Rectifier Chip Integration Technology Corporation 1A1 THRU 1A7 1 Amperes Leaded Type .
Manufacture CITC
Datasheet
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1A4
Chip Silicon Rectifier
Chip Integration Technology Corporation
1A1 THRU 1A7
1 Amperes Leaded Type General Purpose Rectifiers
VOLTAGE : 50 TO 1000Volts
Features
• Axial lead type devices for through hole design.
• High current capability.
• High surge capability.
• Open junction chip inside.
Suffix "G" indicates Halogen-free part, ex.1A1G.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Outline
R-1
.102(2.6)
.091(2.3)
DIA.
.787(20.0)
MIN.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, R-1
• Terminals : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
• Polarity : Color band denotes cathode end
• Weight : Approximated 0.19 gram
.126(3.2)
.091(2.3)
.025(0.65)
.021(0.55)
DIA.
.787(20.0)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Making code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Instantaneous Forward Voltage@1.0A, TA =25OC
Operating Temperature
Symbol 1A1 1A2 1A3 1A4 1A5 1A6 1A7
1A1 1A2 1A3 1A4 1A5 1A6 1A7
VRRM
VRMS
VDC
VF
TJ
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
1.1
-55 ~ +125
UNIT
V
V
OC
Parameter
Forward rectified current
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Maximum reverse recovery time
Storage temperature
Conditions
See Fig.2
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
VR = VRRM TA = 25OC
VR = VRRM TA = 125OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
IF = 0.5A, IR = 1.0A , IRR = 0.25A
Symbol
IO
IFSM
MIN.
IR
RθJA
CJ
Trr
TSTG
-55
TYP.
60
15
MAX.
1.0
30
5.0
500
2500
+150
UNIT
A
A
uA
OC/W
pF
nS
OC
http://www.citcorp.com.tw/
TEL:886-3-6565228
FAX:886-3-6565091
1
Document ID : DS-21G12
Issued Date : 2010/05/05
Revised Date : 2010/10/08
Revision : B



1A4
Chip Silicon Rectifier
Chip Integration Technology Corporation
1A1 THRU 1A7
1 Amperes Leaded Type General Purpose Rectifiers
VOLTAGE : 50 TO 1000Volts
Rating and characteristic curves
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
50
10
3.0
1.0
TJ=25 C
Pulse Width 300us
1% Duty Cycle
0.1
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
1.2
1.0
0.8
0.6 Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.4
0.375"(9.5mm) Lead Length
0.2
0
0 20 40 60 80 100 120 140
AMBIENT TEMPERATURE,( C)
160 180 200
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
.01
.6
.7 .8 .9 1.0 1.1 1.2 1.3
FORWARD VOLTAGE,(V)
30
24
FIG.3 - TYPICAL REVERSE
CHARACTERISTICS
100
18
12
6
0
1
TJ=25 C
8.3ms Single Half
Sine Wave
JEDEC method
5 10
NUMBER OF CYCLES AT 60Hz
50
100
10
1.0
.1
TJ=100 C
TJ=25 C
.01
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
35
30
25
20
15
10
5
0
.01
FIG.5-TYPICAL JUNCTION CAPACITANCE
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100
http://www.citcorp.com.tw/
TEL:886-3-6565228
FAX:886-3-6565091
2
Document ID : DS-21G12
Issued Date : 2010/05/05
Revised Date : 2010/10/08
Revision : B





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