Plastic-Encapsulate Diodes. MM3Z9V1 Datasheet

MM3Z9V1 Diodes. Datasheet pdf. Equivalent

Part MM3Z9V1
Description Plastic-Encapsulate Diodes
Feature Features • Total power dissipation : max. 300 mW • Small plastic package suitable for surface mounte.
Manufacture HOTTECH
Datasheet
Download MM3Z9V1 Datasheet

Elektronische Bauelemente MM3Z SERIES Standard Zener Breakd MM3Z9V1 Datasheet
Surface Mount Zener Diodes P b Lead(Pb)-Free Features: *2 0 MM3Z9V1 Datasheet
200mW Surface Mount Zener Diode FEATURES z Standard zener b MM3Z9V1 Datasheet
MM3Z2V0 - MM3Z75 VZ : 2.0 to 75 V PD : 300 mW FEATURES : * T MM3Z9V1 Datasheet
R SEMICONDUCTOR MM3Z2V0 THRU MM3Z120 0.3W SILICON PLANAR ZE MM3Z9V1 Datasheet
SANGDEST MICROELECTRONICS MM3Z6V8-MM3Z24V Technical Data MM3Z9V1 Datasheet
MM3Z2V4-MM3Z75 200mW Surface Mount Zener Diode FEATURES z MM3Z9V1 Datasheet
MM3Z2V4 THRU MM3Z75V YENYO REVERSE VOLTAGE: POWER DISSIPATI MM3Z9V1 Datasheet
MM3Z2V0_MM3Z75 VZ : 2.0 to 75 V PD : 300 mW Features • Total MM3Z9V1 Datasheet
Features • Total power dissipation : max. 300 mW • Small pla MM3Z9V1 Datasheet
Recommendation Recommendation Datasheet MM3Z9V1 Datasheet





MM3Z9V1
Features
• Total power dissipation : max. 300 mW
Small plastic package suitable for
surface mounted design
Tolerance approximately ± 5%
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at IF = 10 mA
Plastic-Encapsulate Diodes
MM3Z2V0~MM3Z75
-+
SOD-323
Symbol
Ptot
Tj
Tstg
Value
300
150
- 55 to + 150
Unit
mW
OC
OC
Symbol
RθJA
VF
Max.
417
0.9
Unit
OC/W
V
GUANGDONG HOTTECH INDUSTRIAL CO., LTD
Page:P3 -P1



MM3Z9V1
Plastic-Encapsulate Diodes
MM3Z2V0~MM3Z75
Characteristics at Ta = 25 OC
Zener Voltage Range 1)
Type
Vznom
V
lZT for
mA
VZT
V
MM3Z2V0
2.0
MM3Z2V2
2.2
MM3Z2V4
2.4
MM3Z2V7
2.7
MM3Z3V0
3.0
MM3Z3V3
3.3
MM3Z3V6
3.6
MM3Z3V9
3.9
MM3Z4V3
4.3
MM3Z4V7
4.7
MM3Z5V1
5.1
MM3Z5V6
5.6
MM3Z6V2
6.2
MM3Z6V8
6.8
MM3Z7V5
7.5
MM3Z8V2
8.2
MM3Z9V1
9.1
MM3Z10
10
MM3Z11
11
MM3Z12
12
MM3Z13
13
MM3Z15
15
MM3Z16
16
MM3Z18
18
MM3Z20
20
MM3Z22
22
MM3Z24
24
MM3Z27
27
MM3Z30
30
MM3Z33
33
MM3Z36
36
MM3Z39
39
MM3Z43
43
MM3Z47
47
MM3Z51
51
MM3Z56
56
MM3Z62
62
MM3Z68
68
MM3Z75
75
1) VZ is tested with pulses (20 ms).
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1.8...2.15
2.08...2.33
2.28...2.56
2.5...2.9
2.8...3.2
3.1...3.5
3.4...3.8
3.7...4.1
4...4.6
4.4...5
4.8...5.4
5.2...6
5.8...6.6
6.4...7.2
7...7.9
7.7...8.7
8.5...9.6
9.4...10.6
10.4...11.6
11.4...12.7
12.4...14.1
13.8...15.6
15.3...17.1
16.8...19.1
18.8...21.2
20.8...23.3
22.8...25.6
25.1...28.9
28...32
31...35
34...38
37...41
40...46
44...50
48...54
52...60
58...66
64...72
70...79
Dynamic Impedance
ZZT (Max.)
at IZT
mA
100 5
100 5
100 5
110 5
120 5
130 5
130 5
130 5
130 5
130 5
130 5
80 5
50 5
30 5
30 5
30 5
30 5
30 5
30 5
35 5
35 5
40 5
40 5
45 5
50 5
55 5
60 5
70 2
80 2
80 2
90 2
100 2
130 2
150 2
180 2
180 2
200 2
250 2
300 2
Reverse Leakage Current
IR (Max.)
μA
at VR
V
120 0.5
120 0.7
120 1
120 1
50 1
20 1
10 1
51
51
21
2 1.5
1 2.5
13
0.5 3.5
0.5 4
0.5 5
0.5 6
0.1 7
0.1 8
0.1 9
0.1 10
0.1 11
0.1 12
0.1 13
0.1 15
0.1 17
0.1 19
0.1 21
0.1 23
0.1 25
0.1 27
2 30
2 33
2 36
1 39
1 43
0.2 47
0.2 52
0.2 57
GUANGDONG HOTTECH INDUSTRIAL CO., LTD
Page:P3 -P2





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