FREQUENCY TRANSISTOR. NESG2021M16 Datasheet

NESG2021M16 TRANSISTOR. Datasheet pdf. Equivalent

Part NESG2021M16
Description HIGH FREQUENCY TRANSISTOR
Feature PRELIMINARY DATA SHEET NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2021M16 FEATURES • HIGH BREAK.
Manufacture CEL
Datasheet
Download NESG2021M16 Datasheet

PRELIMINARY DATA SHEET NEC's NPN SiGe HIGH FREQUENCY TRANSI NESG2021M16 Datasheet
Recommendation Recommendation Datasheet NESG2021M16 Datasheet





NESG2021M16
PRELIMINARY DATA SHEET
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
NESG2021M16
FEATURES
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
LOW NOISE FIGURE:
NF = 0.9 dB at 2 GHz
NF = 1.3 dB at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN:
MSG = 22.5 dB at 2 GHz
LOW PROFILE M16 PACKAGE:
6-pin lead-less minimold
M16
DESCRIPTION
NEC's NESG2021M16 is fabricated using NEC s high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise ampliers,
medium power ampliers, and oscillators.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
NESG2021M16
M16
SYMBOLS
NF
Ga
NF
Ga
MSG
|S21E|2
P1dB
OIP3
fT
Cre
ICBO
IEBO
hFE
PARAMETERS AND CONDITIONS
UNITS
Noise Figure at VCE = 2 V, IC = 3 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
Associated Gain at VCE = 2 V, IC = 3 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
Associated Gain at VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
Maximum Stable Gain1 at VCE = 3 V, IC = 10 mA, f = 2 GHz
dB
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz
dB
Output Power at 1dB Compression Point at
VCE = 3 V, ICQ = 12 mA, f = 2 GHz
dBm
Output 3rd Order Intercept Point at VCE = 3 V, ICQ = 12 mA, f = 2 GHz dBm
Gain Bandwidth Product at VCE = 3 V, IC = 10 mA, f = 2 GHz
GHz
Reverse Transfer Capacitance2 at VCB = 2 V, IE = 0 mA, f = 1 GHz
pF
Collector Cutoff Current at VCB = 5V, IE = 0
nA
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
DC Current Gain3 at VCE = 2 V, IC = 5 mA
Notes:
1. MSG = S21
S12
2. Collector to base capacitance when the emitter grounded.
3. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.
MIN
15.0
20.0
17.0
20
130
TYP
1.3
10.0
0.9
18.0
22.5
19.0
9
17
25
0.1
190
MAX
1.2
0.2
100
100
260
California Eastern Laboratories



NESG2021M16
NESG2021M16
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
13.0
VCEO Collector to Emitter Voltage V
5.0
VEBO Emitter to Base Voltage
V
1.5
IC Collector Current
mA 35
PT2 Total Power Dissipation
mW
175
TJ Junction Temperature
°C 150
TSTG Storage Temperature
°C -65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy PCB.
ORDERING INFORMATION
PART NUMBER QUANTITY
SUPPLYING FORM
NESG2021M16-T3 10 K pcs
reel
Pin 1 (Collector), Pin 6
(Emitter) face the perforation
side of the tape
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M16
6-PIN LEAD-LESS MINIMOLD
1.0±0.05
0.8+-00..0075
PIN CONNECTIONS
1. Collector 4. Base
2. Emitter 5. Emitter
3. Emitter 6. Emitter
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
09/23/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.





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