N-Channel MOSFET. AOI8N25 Datasheet

AOI8N25 MOSFET. Datasheet pdf. Equivalent

Part AOI8N25
Description 8A N-Channel MOSFET
Feature AOD8N25/AOI8N25 250V,8A N-Channel MOSFET General Description Product Summary The AOD8N25 & AOI8N2.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOI8N25 Datasheet

AOD8N25/AOI8N25 250V,8A N-Channel MOSFET General Descriptio AOI8N25 Datasheet
Recommendation Recommendation Datasheet AOI8N25 Datasheet





AOI8N25
AOD8N25/AOI8N25
250V,8A N-Channel MOSFET
General Description
Product Summary
The AOD8N25 & AOI8N25 have been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.These parts are ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
300V@150
8A
< 0.56
Top View
TO252
DPAK
Bottom View
Top View
TO251A
IPAK
Bottom View
D
D
S
G
AOD8N25
G
S
S
D
G
AOI8N25
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
CurrentB
TC=25°C
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Single pulsed avalanche energy H
Peak diode recovery dv/dt
VGS
ID
IDM
IAS
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
G
D
S
Maximum
250
±30
8
5
16
2.1
132
5
78
0.63
-50 to 150
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
45
-
1.3
Maximum
55
0.5
1.6
G
D
S
Units
V
V
A
A
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev 1: Feb 2012
www.aosmd.com
Page 1 of 6



AOI8N25
AOD8N25/AOI8N25
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=250V, VGS=0V
VDS=200V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=1.5A
gFS Forward Transconductance
VDS=40V, ID=1.5A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
250
300
V
0.25
V/ oC
1
µA
10
±100 nΑ
3.1 3.7 4.3
V
0.46 0.56
5S
0.77 1
V
8A
16 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
306
51
3.2
1.7 3.4 5.1
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=200V, ID=1.5A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=125V, ID=1.5A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=1.5A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=1.5A,dI/dt=100A/µs,VDS=100V
6.0 7.2
2.0
1.5
14
12
23
12
77
0.29
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2.1A, VDD=150V, RG=10, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Feb 2012
www.aosmd.com
Page 2 of 6





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