AOD8N25/AOI8N25
250V,8A N-Channel MOSFET
General Description
Product Summary
The AOD8N25 & AOI8N25 have been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.These parts are ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
300V@150℃
8A
< 0.56Ω
Top View
TO252
DPAK
Bottom View
Top View
TO251A
IPAK
Bottom View
D
D
S
G
AOD8N25
G
S
S
D
G
AOI8N25
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
CurrentB
TC=25°C
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Single pulsed avalanche energy H
Peak diode recovery dv/dt
VGS
ID
IDM
IAS
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
G
D
S
Maximum
250
±30
8
5
16
2.1
132
5
78
0.63
-50 to 150
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
45
-
1.3
Maximum
55
0.5
1.6
G
D
S
Units
V
V
A
A
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev 1: Feb 2012
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