NPN TRANSISTOR. KTC3193 Datasheet

KTC3193 TRANSISTOR. Datasheet pdf. Equivalent

Part KTC3193
Description EPITAXIAL PLANAR NPN TRANSISTOR
Feature SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE.
Manufacture KEC
Datasheet
Download KTC3193 Datasheet

SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY APPLICATION. HF, KTC3193 Datasheet
Recommendation Recommendation Datasheet KTC3193 Datasheet





KTC3193
SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION.
HF, VHF BAND AMPLIFIER APPLICATION.
FEATURE
High Power Gain : Gpe=30dB(Typ.) (f=10.7MHz).
Recommended for FM IF, OSC Stage and AM CONV, IF Stage.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Storage Temperature Range
Tstg
RATING
35
30
4
50
-50
400
150
-55150
UNIT
V
V
V
mA
mA
mW
KTC3193
EPITAXIAL PLANAR NPN TRANSISTOR
B
HM
C
EE
1 2 3N
L
1. EMITTER
2. COLLECTOR
3. BASE
O DIM MILLIMETERS
A 3.20 MAX
B 4.30 MAX
C 0.55 MAX
D 2.40+_ 0.15
E 1.27
F 2.30
G 14.00+_ 0.50
H 0.60 MAX
J 1.05
K 1.45
L 25
M 0.80
N 0.55 MAX
O 0.75
TO-92M
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
VCB=35V, IE=0
Emitter Cut-off Current
IEBO
VEB=4V, IC=0
DC Current Gain
hFE (Note) VCE=12V, IC=2mA
Collector-Emitter Saturation Voltage
VCE(sat)
IC=10mA, IB=1mA
Base-Emitter Saturation Voltage
VBE(sat)
IC=10mA, IB=1mA
Transition Frequency
fT VCE=10V, IC=1mA
Collector Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
Collector-Base Time Constant
CcrbbVCE=10V, IE=-1mA, f=30MHz
Power Gain
Gpe VCC=6V, IE=-1mA, f=10.7MHz (Fig.)
Note : hFE Classification R:4080 , O:70140 , Y:120240
MIN.
-
-
40
-
-
100
-
10
27
TYP.
-
-
-
-
-
-
2.0
-
29
MAX.
0.1
1.0
240
0.4
1.0
-
3.2
50
33
UNIT
A
A
V
V
MHz
pF
pS
dB
1996. 9. 6
Revision No : 1
1/4



KTC3193
Fig. Gpe TEST CIRCUIT
INPUT 0.05uF
Rg=50
12pF
KTC3193
1T
2
4
OUTPUT
RL=50
T : 1 - 2 0.1mmΦ UEW 20T
2 - 3 0.1mmΦ UEW 8T
4 - 5 0.1mmΦ UEW 2T
35
IE VCC
y PARAMETERS (Typ.)
(1) (COMMON EMITTER f=455kHz, Ta=25)
CHARACTERISTIC
Collector-Emitter Voltage
Emitter Current
Input Conductance
Input Capacitance
Output Conductance
Output Capacitance
Forward Transfer Admittance
Phase Angle of Forward Transfer Admittance
Reverse Transfer Admittance
Phase Angle of Reverse Transfer Admittance
SYMBOL
VCE
IE
gie
Cie
goe
Coe
|yfe|
fe
|yre|
re
KTC3193-R
6
-1
0.58
53
1.9
2.6
38
-0.79
5.7
-90
KTC3193-O
6
-1
0.41
46
2.7
2.8
38
-0.83
5.7
-90
KTC3193-Y
6
-1
0.26
38
4.8
3.6
38
-0.92
6.2
-90
(2) (COMMON EMITTER f=10.7kHz, Ta=25)
CHARACTERISTIC
Collector-Emitter Voltage
Emitter Current
Input Conductance
Input Capacitance
Output Conductance
Output Capacitance
Forward Transfer Admittance
Phase Angle of Forward Transfer Admittance
Reverse Transfer Admittance
Phase Angle of Reverse Transfer Admittance
SYMBOL
VCE
IE
gie
Cie
goe
Coe
|yfe|
fe
|yre|
re
KTC3193-R
6
-1
1.04
49
10
2.7
37
-9.6
120
-90
KTC3193-O
6
-1
0.85
43
15
2.9
37
-10.4
120
-90
KTC3193-Y
6
-1
0.65
36
28
3.6
37
-11.5
140
-90
UNIT
V
mA
mS
pF
S
pF
mS
S
UNIT
V
mA
mS
pF
S
pF
mS
S
1996. 9. 6
Revision No : 1
2/4





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)