SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION.
FEATURE ᴌHigh Power Gain : ...
SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION.
FEATURE ᴌHigh Power Gain : Gpe=30dB(Typ.) (f=10.7MHz). ᴌRecommended for FM IF, OSC Stage and AM CONV, IF Stage.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC IE PC Tj
Storage Temperature Range
Tstg
RATING 35 30 4 50 -50 400 150
-55ᴕ150
UNIT V V V mA mA
mW ᴱ ᴱ
J K
D
KTC3193
EPITAXIAL PLANAR
NPN TRANSISTOR
B
F A
HM
C
EE
1 2 3N L
1. EMITTER 2. COLLECTOR 3. BASE
G
O DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX D 2.40+_ 0.15 E 1.27
F 2.30 G 14.00+_ 0.50 H 0.60 MAX J 1.05 K 1.45
L 25 M 0.80 N 0.55 MAX
O 0.75
TO-92M
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
VCB=35V, IE=0
Emitter Cut-off Current
IEBO
VEB=4V, IC=0
DC Current Gain...
