SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES ᴌHigh Breakdown Voltage. ᴌCollector Power Dissipation : ...
SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES ᴌHigh Breakdown Voltage. ᴌCollector Power Dissipation : PC=625mW.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC PC Tj Tstg
RATING 400 350 6 300 625 150
-55ᴕ150
UNIT V V V mA mW ᴱ ᴱ
L M
C
KTC3245
EPITAXIAL PLANAR
NPN TRANSISTOR
BC
JA
K
E G
D
H
FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. EMITTER 2. COLLECTOR 3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (1) Collector-Emitter Breakdown Voltage (2) Emitter-Base Breakdown Voltage Collector Cut off Current Collector Cut off Current Emitter Cutoff Current
V(BR)CBO V(BR)CE...
