NPN TRANSISTOR. KTC3544T Datasheet

KTC3544T TRANSISTOR. Datasheet pdf. Equivalent

Part KTC3544T
Description EPITAXIAL PLANAR NPN TRANSISTOR
Feature SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. F.
Manufacture KEC
Datasheet
Download KTC3544T Datasheet

SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, M KTC3544T Datasheet
Recommendation Recommendation Datasheet KTC3544T Datasheet





KTC3544T
SEMICONDUCTOR
TECHNICAL DATA
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS AND STROBES APPLICATION.
FEATURES
Adoption of MBIT Processes.
Large Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
High Speed Switching.
Ultrasmall Package facilitates miniaturization in end products.
High Allowable Power Dissipation.
Complementary to KTA1544T.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC *
Tj
30
30
6
2
4
400
0.9
150
Storage Temperature Range
Tstg -55150
* Package mounted on a ceramic board (600Ὅᴧ0.8)
UNIT
V
V
V
A
mA
W
KTC3544T
EPITAXIAL PLANAR NPN TRANSISTOR
E
KB
23
1
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9 +_0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
JJ
1. EMITTER
2. BASE
3. COLLECTOR
TSM
Marking
H NType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
TEST CONDITION
VCB=20V, IE=0
VEB=3V, IC=0
IC=10A, IE=0
IC=1mA, IB=0
IE=10A, IC=0
IC=1.5A, IB=75mA
IC=1.5A, IB=75mA
VCE=2V, IC=100mA
VCE=10V, IC=50mA
VCB=10V, f=1MHz
MIN.
-
-
30
30
6
-
-
200
-
-
TYP.
-
-
-
-
-
180
0.85
-
150
19
MAX.
0.1
0.1
-
-
-
400
1.2
560
-
-
UNIT
A
A
V
V
V
mV
V
MHz
pF
Swiitching
Time
Turn-On Time
Storage Time
Fall Time
ton
PW=20µs
DC <= 1%
IB1
IB2
INPUT
RB
tstg 50VR
OUTPUT
24Ω
-
-
100µF
470µF
tf
VBE =-5V
VCC =12V
-
20IB1=-20IB2=IC =500mA
60
500
25
-
-
-
nS
2001. 11. 7
Revision No : 0
1/3



KTC3544T
KTC3544T
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
I C - VCE
30mA
20mA
10mA
8mA
6mA
4mA
2mA
I B=0mA
0.2 0.4 0.6 0.8 1.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
h FE - I C
1K
VCE =2V
500
300
100
50
30
0.01
0.03 0.1
0.3
1
COLLECTOR CURRENT IC (A)
2
1
IC /IB =10
0.5
0.3
VCE(sat) - I C
0.1
0.05
0.03
0.01
0.005 0.01
0.03 0.05 0.1
0.3 0.5 1
COLLECTOR CURRENT IC (A)
2
2.0
V CE =2V
1.6
I C - VBE
1.2
0.8
0.4
0
0 0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE VBE (V)
fT - IC
1K
VCE =10V
500
300
100
50
30
10
0.01
0.03 0.1 0.3 1
COLLECTOR CURRENT IC (A)
2
2001. 11. 7
Revision No : 0
C ob - V CB
100
f=1MHz
70
50
30
10
1
35
10
305
COLLECTOR-BASE VOLTAGE VCB (V)
0
2/3





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