N-Channel Power MOSFET
FNK02N09S
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK02N09S uses advanced trench technology to prov...
Description
FNK02N09S
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK02N09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Features
● VDS = 20V,ID =15A RDS(ON) < 15mΩ @ VGS=2.5V RDS(ON) < 10mΩ @ VGS=4.5V ESD Rating: 2000V HBM
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Schematic diagram Marking and pin assignment
Application
● Uni-directional load switch ● Bi-directional load switch
TSSOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
02N09S
FNK02N09S
TSSOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous Drain Curr...
Similar Datasheet