FNK65N07D

FNK N-Channel Enhancement Mode Power MOSFET Description The FNK65N07D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK65N07D General Features ● VDS =65V,ID =85A RDS(ON) < 7.7mΩ @ VGS=10V (Typ:6.3mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply To-263 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK65N07D FNK65N07D TO-263 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Contin...