Power MOSFET. FNK8205 Datasheet

FNK8205 MOSFET. Datasheet pdf. Equivalent

Part FNK8205
Description N-Channel Power MOSFET
Feature FNK8205 FNK N-Channel Enhancement Mode Power MOSFET Description TheFNK8205 uses advanced trench te.
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Recommendation Recommendation Datasheet FNK8205 Datasheet





FNK8205
FNK8205
FNK N-Channel Enhancement Mode Power MOSFET
Description
TheFNK8205 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
D1
G1
G2
D2
General Features
VDS = 20V,ID = 6A
RDS(ON) <38m@ VGS=2.5V
RDS(ON) < 28m@ VGS=4.5V
S1 S2
Schematic diagram
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Application
Battery protection
Load switch
Power management
Marking and pin Assignment
SOT23-6L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
8205
FNK8205
SOT23-6L
Reel Size
Ø180mm
Tape width
8mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
20
±12
6
24
1.25
-55 To 150
100
Unit
V
V
A
A
W
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=19.5V,VGS=0V
Min Typ Max Unit
20 21
--
-
1
V
μA
FNK-Semiconductor
1/7
Jan.2017.Rev.1.0



FNK8205
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
VGS=±10V,VDS=0V
VDS=VGS,ID=250μA
VGS=4.5V, ID=4A
VGS=2.5V, ID=3A
VDS=5V,ID=4A
VDS=8V,VGS=0V,
F=1.0MHz
VDD=10V,ID=1A
VGS=4V,RGEN=10
VDS=10V,ID=4A,
VGS=4.5V
VGS=0V,IS=2A
FNK8205
- - ±100 nA
0.5 0.65
- 18
- 22
- 10
1.2
28
38
-
V
m
m
S
- 600
- 330
- 140
-
-
-
PF
PF
PF
- 18
-5
- 43
- 20
- 11
- 2.3
- 2.5
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- 0.8 1.2
--
2
V
A
FNK-Semiconductor
2/7
Jan.2017.Rev.1.0





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