Document
FNK10N25SC
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK10N25S uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
G
D
D G
General Features
● VDS = 18V,Id = 8A RDS(ON) <18mΩ @ VGS=2.5V RDS(ON) < 14m Ω @ VGS=4.5V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
SS Schematic diagram
Application
●Battery protection ●Load switch ●Power management
TSSOP-8 top view
Marking and pin assignment
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK10N25S
FNK10N25S
TSSOP-8L
Reel Size Ø330mm
Tape width 12 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Curr.