Power MOSFET. FNK22001 Datasheet

FNK22001 MOSFET. Datasheet pdf. Equivalent

Part FNK22001
Description N-Channel Power MOSFET
Feature FNK N-Channel Enhancement Mode Power MOSFET Description The FNK22001 uses advanced trench technology.
Manufacture FNK
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FNK N-Channel Enhancement Mode Power MOSFET Description The FNK22001 Datasheet
FNK22001A FNK N-Channel Enhancement Mode Power MOSFET Descr FNK22001A Datasheet
FNK22001AF FNK N-Channel Enhancement Mode Power MOSFET Desc FNK22001AF Datasheet
FNK22001D FNK N-Channel Enhancement Mode Power MOSFET Descr FNK22001D Datasheet
Recommendation Recommendation Datasheet FNK22001 Datasheet





FNK22001
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK22001 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
FNK22001
General Features
VDS =80V,ID =105A
RDS(ON) < 8m@ VGS=10V
(Typ:6.3m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Automotive applications
Hard switched and high frequency circuits
Uninterruptible power supply
Schematic diagram
TO-220-3L top view
Marking and pin assignment
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK22001
FNK22001
TO-220-3L
Reel Size
-
Tape width
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Limit
80
±20
105
80
420
200
1.33
Quantity
-
Unit
V
V
A
A
A
W
W/
FNK-Semiconductor
1/7
Feb.2017.Rev.1.0



FNK22001
FNK22001
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
800
-55 To 175
mJ
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.75 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=80V,VGS=0V
80 86
--
-
1
V
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
23
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
- 6.3
8
m
Forward Transconductance
gFS
VDS=25V,ID=40A
80 -
-
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 4900
- 410
-
-
PF
PF
Crss
- 315
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD=30V,ID=2A,RL=15,
RG=2.5,VGS=10V
-
-
-
20
19
70
-
-
-
nS
nS
nS
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
tf - 30
Qg - 125
Qgs ID=30A,VDD=30V,VGS=10V -
24
-
-
-
nS
nC
nC
Gate-Drain Charge
Qgd
- 49
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=40A
- - 1.2
V
Diode Forward Current (Note 2)
IS
- - 105
A
Reverse Recovery Time
Reverse Recovery Charge
trr
Tj=25,IF=75A,
- 37
Qrr
di/dt=100A/uS (Note3)
- 58
nS
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=40V,VG=10V,L=0.5mH,Rg=25
FNK-Semiconductor
2/7
Feb.2017.Rev.1.0





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