Power MOSFET. FNK30H160D Datasheet

FNK30H160D MOSFET. Datasheet pdf. Equivalent

Part FNK30H160D
Description N-Channel Power MOSFET
Feature FNK30H160D FNK N-Channel Enhancement Mode Power MOSFET Description The FNK30H160 uses advanced tren.
Manufacture FNK
Datasheet
Download FNK30H160D Datasheet

FNK30H160D FNK N-Channel Enhancement Mode Power MOSFET Desc FNK30H160D Datasheet
Recommendation Recommendation Datasheet FNK30H160D Datasheet





FNK30H160D
FNK30H160D
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK30H160 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =30V,ID =160A
RDS(ON) <2.4 m@ VGS=10V
RDS(ON) <3.5m@ VGS=4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
To-263 Top View
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK30H160 FNK30H160D
TO-263
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
160
105
640
130
0.87
433
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
FNK-Semiconductor
1/7
Oct.2016.Rev.1.0



FNK30H160D
FNK30H160D
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.15 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=30V,VGS=0V
Gate-Body Leakage Current
On Characteristics (Note 3)
IGSS VGS=±20V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
RDS(ON)
gFS
VGS=10V, ID=20A
VGS=4.5V, ID=10A
VDS=10V,ID=20A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
tf
VDD=15V,ID=2A,RL=15
VGS=10V,RG=2.5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=15V,ID=30A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD VGS=0V,IS=10A
IS
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = 25°C, IF = 40A
Qrr di/dt = 100A/μs(Note3)
Min Typ Max
30 35
-
--
1
- - ±100
1.0 1.6
- 1.9
2.8
32 -
2.5
2.4
3.5
-
- 4275
- 445
- 375
-
-
-
- 26
- 24
- 91
- 39
- 38
-9
- 13
-
-
-
-
- 1.2
- - 150
- 42
-
- 39
-
Unit
V
μA
nA
V
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25,VDD=20V,VG=10V,L=0.5mH,Rg=25
FNK-Semiconductor
2/7
Oct.2016.Rev.1.0





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)