FNK80N08K

FNK N-Channel Enhancement Mode Power MOSFET Description The FNK80N08K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 80V,ID =70A RDS(ON) < 11.5m Ω @ VGS=10V (Typ:9.5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation FNK80N08K Schematic diagram Application ● Power switching application ● Hard switched and High frequency circuits ● Uninterruptible power supply TO-252 top view Package Marking and Ordering Information Device Marking Device Device Package FNK80N08K FNK80N08K TO-252 Reel Size - Tape width - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=10...