N-Channel Power MOSFET
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK6808A uses advanced trench technology and design to provi...
Description
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK6808A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK6808A
General Features
● VDS = 68V,ID =80A RDS(ON) < 7.0mΩ @ VGS=10V
(Typ:5.9mΩ)
● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application ● Hard switched and High frequency circuits ● Uninterruptible power supply
To-220 Top View
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK6808A
FNK6808A
TO-220-3L
Reel Size -
Tape width -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain C...
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