FNK6808D

FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6808D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK6808D General Features ● VDS = 68V,ID =80A RDS(ON) < 7.0mΩ @ VGS=10V (Typ:5.9mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and High frequency circuits ● Uninterruptible power supply To-263 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK6808D FNK6808D TO-263 Reel Size - Tape width - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Curr...