Document
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK6808D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK6808D
General Features
● VDS = 68V,ID =80A RDS(ON) < 7.0mΩ @ VGS=10V
(Typ:5.9mΩ)
● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application ● Hard switched and High frequency circuits ● Uninterruptible power supply
To-263 Top View
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK6808D
FNK6808D
TO-263
Reel Size -
Tape width -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Curr.