FNK8310

N and P-Channel Enhancement Mode Power MOSFET Description The FNK8310 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. FNK8310 General Features ● N-Channel VDS = 30V,ID =6.5A RDS(ON) < 32mΩ @ VGS=10V ● P-Channel VDS = -30V,ID = -7A RDS(ON) < 45mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package N-channel P-channel Schematic diagram Marking and pin assignment Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width 8310 FNK8310 DFN2x3-8L Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unless otherwise noted) Quantity 3000 units Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TA=25℃ TA=70℃ Maximum Power Dissipation TA=25℃ Operating Junc...