Power MOSFET. FNK8310 Datasheet

FNK8310 MOSFET. Datasheet pdf. Equivalent

Part FNK8310
Description P-Channel Power MOSFET
Feature N and P-Channel Enhancement Mode Power MOSFET Description The FNK8310 uses advanced trench technolog.
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N and P-Channel Enhancement Mode Power MOSFET Description Th FNK8310 Datasheet
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FNK8310
N and P-Channel Enhancement Mode Power MOSFET
Description
The FNK8310 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge . The complementary
MOSFETs may be used to form a level shifted high side
switch, and for a host of other applications.
FNK8310
General Features
N-Channel
VDS = 30V,ID =6.5A
RDS(ON) < 32m@ VGS=10V
P-Channel
VDS = -30V,ID = -7A
RDS(ON) < 45m@ VGS=-10V
High power and current handing capability
Lead free product is acquired
Surface mount package
N-channel
P-channel
Schematic diagram
Marking and pin assignment
Package Marking and Ordering Information
Device Marking Device
Device Package Reel Size
Tape width
8310
FNK8310
DFN2x3-8L
Ø330mm
12mm
Absolute Maximum Ratings (TA=25unless otherwise noted)
Quantity
3000 units
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TA=25
TA=70
Maximum Power Dissipation
TA=25
Operating Junction and Storage Temperature Range
Thermal Characteristic
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
N-Channel
30
±20
6.5
5.4
30
2.0
-55 To 150
P-Channel
-30
±20
-7
-5.8
-30
2.0
-55 To 150
Unit
V
V
A
A
W
Thermal Resistance,Junction-to-Ambient (Note2)
Thermal Resistance,Junction-to-Ambient (Note2)
RθJA
RθJA
N-Ch
P-Ch
62.5 /W
62.5 /W
FNK-Semiconductor
1/10 Sep.2017.Rev.1.0



FNK8310
FNK8310
N-CH Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=30V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
RDS(ON)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=2A
VGS=4.5V, ID=2A
VGS=3.3V, ID=2A
VDS=5V,ID=6A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=15V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=15V, RL=2.5
VGS=10V,RGEN=3
VDS=15V,ID=6A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD VGS=0V,IS=6A
Min
30
-
-
0.7
-
-
-
15
-
-
-
-
-
-
-
-
-
-
-
Typ
31
-
-
1.0
23
25
26
-
255
45
35
4.5
2.5
14.5
3.5
13
5.5
3.5
0.8
Max
-
1
±100
1.5
32
38
42
-
-
-
-
-
-
-
-
-
-
-
1.2
Unit
V
μA
nA
V
m
m
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
FNK-Semiconductor
2/10 Sep.2017.Rev.1.0





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