N-Channel Power MOSFET
FNK03N02E
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK03N02E uses advanced trench technology and des...
Description
FNK03N02E
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK03N02E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =140A RDS(ON) <3.0 mΩ @ VGS=10V RDS(ON) <4.0mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Schematic diagram
Top View
DFN5X6 Bottom View
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
PIN1
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK03N02E
FNK03N02E
DFN5x6-8L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source ...
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