Power MOSFET. FNK03N02E Datasheet

FNK03N02E MOSFET. Datasheet pdf. Equivalent

Part FNK03N02E
Description N-Channel Power MOSFET
Feature FNK03N02E FNK N-Channel Enhancement Mode Power MOSFET Description The FNK03N02E uses advanced trenc.
Manufacture FNK
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FNK03N02E FNK N-Channel Enhancement Mode Power MOSFET Descr FNK03N02E Datasheet
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FNK03N02E
FNK03N02E
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK03N02E uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =30V,ID =140A
RDS(ON) <3.0 m@ VGS=10V
RDS(ON) <4.0m@ VGS=4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Top View
DFN5X6
Bottom View
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
PIN1
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK03N02E
FNK03N02E
DFN5x6-8L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
140
105
560
130
0.87
240
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
FNK-Semiconductor
1/7
Jun.2017.Rev.1.0



FNK03N02E
FNK03N02E
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.15 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=30V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=20A
VGS=4.5V, ID=10A
VDS=10V,ID=20A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=15V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=15V,ID=2A,RL=15
VGS=10V,RG=2.5
VDS=15V,ID=30A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=150A
IS
trr TJ = 25°C, IF = 20A
Qrr di/dt = 100A/μs(Note3)
Min Typ Max
30 34
-
--
1
- - ±100
1.0 1.2
- 2.1
2.4
32 -
2.0
3.0
4.0
-
- 5400
- 720
- 560
-
-
-
- 26
- 24
- 91
- 39
- 38
-9
- 13
-
-
-
-
- 1.2
- - 150
- 42
-
- 39
-
Unit
V
μA
nA
V
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25,VDD=20V,VG=10V,L=0.5mH,Rg=25IAS=58.5A
FNK-Semiconductor
2/7
Jun.2017.Rev.1.0





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