Power MOSFET. FNK8819B Datasheet

FNK8819B MOSFET. Datasheet pdf. Equivalent

Part FNK8819B
Description N-Channel Power MOSFET
Feature FNK N-Channel Enhancement Mode Power MOSFET Description The FNK8819B uses advanced trench technology.
Manufacture FNK
Datasheet
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FNK N-Channel Enhancement Mode Power MOSFET Description The FNK8819B Datasheet
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FNK8819B
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK8819B uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
FNK8819B
General Features
VDS =20V,ID =7A
RDS(ON) < 20m@ VGS=4.5V
RDS(ON) < 28m@ VGS=2.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin Assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK8819B
FNK8819B
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
20
±10
7
3.8
28
1.25
-55 To 150
Unit
V
V
A
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
100 /W
FNK-Semiconductor
1/7
Jun.2017.Rev.1.0



FNK8819B
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=20V,VGS=0V
VGS=±10V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
RDS(ON)
gFS
VGS=4.5V, ID=6A
VGS=2.5V, ID=5A
VDS=5V,ID=6A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=10V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=10V,ID=1A
VGEN=4.5V,RG=6
VDS=10V,ID=3A,
VGS=4.5V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD VGS=0V,IS=1.7A
IS
FNK8819B
Min Typ Max Unit
20 22
-
--
1
- - ±100
V
μA
nA
0.5 0.7
- 17.4
- 22
20 -
1.2
20
28
-
V
m
S
- 640
- 140
- 80
-
-
-
PF
PF
PF
-8
-9
- 15
-4
- 10
- 1.5
- 1.6
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
--
6
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
FNK-Semiconductor
2/7
Jun.2017.Rev.1.0





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