FNK8819B

FNK N-Channel Enhancement Mode Power MOSFET Description The FNK8819B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK8819B General Features ● VDS =20V,ID =7A RDS(ON) < 20mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=2.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin Assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package FNK8819B FNK8819B SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Cu...