Power MOSFET. FNK10N02-A Datasheet

FNK10N02-A MOSFET. Datasheet pdf. Equivalent

Part FNK10N02-A
Description N-Channel Power MOSFET
Feature FNK10N02-A FNK N-Channel Enhancement Mode Power MOSFET Description The FNK10N02-A uses advanced tre.
Manufacture FNK
Datasheet
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FNK10N02-A FNK N-Channel Enhancement Mode Power MOSFET Desc FNK10N02-A Datasheet
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FNK10N02-A
FNK10N02-A
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK10N02-A uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =20V,ID =180A
RDS(ON) <2.25m@ VGS=4.5V
(Typ1.95m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Marking and pin assignment
Schematic diagram
Top View
DFN5X6
Bottom View
Application
Power switching application
Load switching
Uninterruptible power supply
PIN1
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
FNK10N02
FNK10N02
DFN5*6-8L
-
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Limit
20
±12
Drain Current-Continuous
ID 180
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
ID (100)
IDM
PD
EAS
TJ,TSTG
154
720
83
504
-55 To 150
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.5
Quantity
-
Unit
V
V
A
A
A
W
mJ
/W
FNK-Semiconductor
1/7
Oct.2016.Rev.1.0



FNK10N02-A
FNK10N02-A
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=20V,VGS=0V
VGS=±12V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=4.5V, ID=20A
VGS=2.5V, ID=20A
VDS=5V,ID=30A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=10V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VGS=10V,VDS=10V
RL=0. 5Ω,RGEN=3Ω
VGS=4.5V,VDS=10V,ID=30A
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=20A
IS -
trr TJ = 25°C, IF = 30A
Qrr di/dt = 100A/μs(Note3)
Min
20
-
-
0.4
-
-
100
-
-
-
-
-
-
-
-
Typ
-
-
-
0.7
1.95
2.05
-
9585
1145
940
12.5
35.5
40
32.5
30.4
9.5
19.8
-
-
35.3
30.7
Max
-
1
±100
1
2.25
2.6
-
-
-
-
-
1.2
110
-
-
Unit
V
μA
nA
V
m
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=10V,VG=10V,L=0.5mH,Rg=25
FNK-Semiconductor
2/7
Oct.2016.Rev.1.0





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