Power MOSFET. FNK04N02A Datasheet

FNK04N02A MOSFET. Datasheet pdf. Equivalent

Part FNK04N02A
Description N-Channel Power MOSFET
Feature FNK N-Channel Enhancement Mode Power MOSFET Description TheFNK04N02A uses advanced trench technology.
Manufacture FNK
Datasheet
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FNK N-Channel Enhancement Mode Power MOSFET Description TheF FNK04N02A Datasheet
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FNK04N02A
FNK N-Channel Enhancement Mode Power MOSFET
Description
TheFNK04N02A uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
FNK04N02A
General Features
VDS =40V ,ID =140A
RDS(ON) <3.9m@ VGS=10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
To-220 Top View
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK04N02A
FNK04N02A
TO-220-3L
Reel Size
-
Tape width
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Limit
40
±20
140
118
560
310
2.07
Quantity
-
Unit
V
V
A
A
A
W
W/
FNK-Semiconductor
1/7
Jun.2017.Rev.1.0



FNK04N02A
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
FNK04N02A
370
-55 To 175
mJ
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.48 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=40V,VGS=0V
Gate-Body Leakage Current
On Characteristics (Note 3)
IGSS VGS=±20V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
Forward Transconductance
Dynamic Characteristics (Note4)
gFS VDS=24V,ID=40A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=20V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD=30V,ID=2A,RL=15,
RG=2.5,VGS=10V
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
tf
Qg
Qgs ID=30A,VDD=30V,VGS=10V
Gate-Drain Charge
Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD VGS=0V,IS=40A
Diode Forward Current (Note 2)
IS
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = 25°C, IF = 40A
Qrr di/dt = 100A/μs(Note3)
Min
40
-
-
1
-
160
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
2.0
2.4
-
5480
690
505
40
38
140
60
250
48
98
0.85
-
48
78
Max
-
1
±100
3
3.9
-
-
-
-
-
-
-
-
-
-
-
1.2
140
Unit
V
μA
nA
V
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=20V,VG=10V,L=0.5mH,Rg=25
FNK-Semiconductor
2/7
Jun.2017.Rev.1.0





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