FNK N-Channel Enhancement Mode Power MOSFET
Description
TheFNK04N02A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK04N02A
General Features
● VDS =40V ,ID =140A RDS(ON) <3.9mΩ @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized ava...
