POWER TRANSISTOR. MRA1417-6H Datasheet

MRA1417-6H TRANSISTOR. Datasheet pdf. Equivalent

Part MRA1417-6H
Description NPN SILICON RF POWER TRANSISTOR
Feature MRA1417-6H NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA1417-6H is a Common Base Device Des.
Manufacture ASI
Datasheet
Download MRA1417-6H Datasheet

MRA1417-6H NPN SILICON RF POWER TRANSISTOR DESCRIPTION: Th MRA1417-6H Datasheet
Recommendation Recommendation Datasheet MRA1417-6H Datasheet





MRA1417-6H
MRA1417-6H
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRA1417-6H is a Common
Base Device Designed for Class C
Amplifier Applications in L-Band FM
Microwave Links.
FEATURES INCLUDE:
Gold Metallization
Emitter Ballasting
Input Matching
MAXIMUM RATINGS
IC 1.0 A
VCBO
PDISS
TJ
TSTG
θJC
50 V
19 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +200 OC
9.0 OC/W
PACKAGE STYLE .250 2L FLG (B)
1 = COLLECTOR 2 = BASE
3 = EMITTER
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCBO
BVCES
BVEBO
IC = 25 mA
IC = 25 mA
IE = 3.0 mA
hFE VCE = 5.0 V IC = 100 mA
MINIMUM TYPICAL MAXIMUM
50
55
3.5
20 100
Cob VCB = 28 V
f = 1.0 MHz
6.5
PG
ηC
VCE = 28 V POUT = 6.0 W f = 1400 - 1700 MHz
7.2
7.5
40
UNITS
V
V
V
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)