POWER TRANSISTOR. MRA1417-11 Datasheet

MRA1417-11 TRANSISTOR. Datasheet pdf. Equivalent

Part MRA1417-11
Description NPN SILICON RF POWER TRANSISTOR
Feature MRA1417-11 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRA1417-11 is a Common Base Device.
Manufacture ASI
Datasheet
Download MRA1417-11 Datasheet

MRA1417-11 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: Th MRA1417-11 Datasheet
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MRA1417-11
MRA1417-11
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRA1417-11 is a Common
Base Device Designed for Class C
Power Amplifier Applications up to 1.7
GHz.
FEATURES INCLUDE:
Gold Metallization
Emitter Ballasting
Input Matching
MAXIMUM RATINGS
IC 4.0 A
VCBO
50 V
PDISS
12 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC 4.5 °C/W
PACKAGE STYLE 250 2L FLG (C)
1 = COLLECTOR 2 = BASE
3 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCES
IC = 80 mA
BVEBO
IE = 1.0 mA
ICBO
VCB = 28 V
hFE VCE = 5.0 V IC = 4.0 A
MINIMUM TYPICAL MAXIMUM
50
3.5
2.0
10 100
UNITS
V
V
mA
---
Cob VCB = 28 V
f = 1.0 MHz
12 pF
PG
ηC
VCE = 28 V POUT = 11 W
f = 1700 MHz
7.4
45
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1





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