CMOS SRAM
K6T0808V1D, K6T0808U1D Family
Document Title
32Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision Hi...
Description
K6T0808V1D, K6T0808U1D Family
Document Title
32Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. 0.0
History Initial draft
1.0 Finalize - Add 70ns part in KM62U256D Family
- Show ICC read only, and increased value ICC = 2mA →ICC Read = 5mA
- Seperate ICC1 read and write ICC1 = 5mA→ICC1 Read = 5mA, ICC1 Write = 10mA
- Improved standby current(ISB1) Commercial part : 10µA→5µA Extended and Industrial part : 20µA→5µA
- Improved VIL(Min.) : 0.4V→0.6V - Improved power dissipation : 0.7W→1W
Draft Data April 1, 1997
November 12, 1997
Remark Preliminary
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO, LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0 November 1997
K6T0808V1D, K6T0808U1D Family
CMOS SRAM
32Kx8 bit Low Power and L...
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