CMOS SRAM
K6F1016U4B Family
Preliminary CMOS SRAM
Document Title
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RA...
Description
K6F1016U4B Family
Preliminary CMOS SRAM
Document Title
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History 0.0 Initial Draft
Draft Date May 2, 2000
Remark Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 0.0 May 2000
K6F1016U4B Family
Preliminary CMOS SRAM
64K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
Process Technology: Full CMOS Organization: 64K x16 bit Power Supply Voltage: 2.7~3.3V Low Data Retention Voltage: 1.5V(Min) Three state output status and TTL Compatible Package Type: 48-FBGA-6.00x7.00
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range
K6F1016U4B-F Industrial(-40~85°C) 1. The parameter i...
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