CMOS SRAM
K6F1616R6A Family
Preliminary CMOS SRAM
Document Title
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM...
Description
K6F1616R6A Family
Preliminary CMOS SRAM
Document Title
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History 0.0 Initial draft
Draft Date
Remark
September 12, 2001 Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 0.0 September 2001
K6F1616R6A Family
Preliminary CMOS SRAM
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
Process Technology: Full CMOS Organization: 1M x16 Power Supply Voltage: 1.65~2.2V Low Data Retention Voltage: 1.0V(Min) Three State Outputs Package Type: 48-TBGA-7.50x9.50
GENERAL DESCRIPTION
The K6F1616R6A families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support ind...
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