HY62UF16406E

HY62UF16406E Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History 00 Initial Draft 01 Package Height Changed 1.0mm -> 0.9mm Draft Date Remark Dec.20.2001 Preliminary Mar.05.2002 Preliminary This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.01 / Mar.02 Hynix Semiconductor DESCRIPTION The HY62UF16406E is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62UF16406E uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V. HY62UF16406E Series...