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AOB411L Dataheets PDF



Part Number AOB411L
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 60V P-Channel MOSFET
Datasheet AOB411L DatasheetAOB411L Datasheet (PDF)

AOB411L 60V P-Channel MOSFET General Description The AOB411L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) 100% UIS Tested 100% Rg Tested -60V -78A < 16.5mΩ < 22mΩ D G S Absolute Maximum Ratings TA=25°C unless o.

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AOB411L 60V P-Channel MOSFET General Description The AOB411L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) 100% UIS Tested 100% Rg Tested -60V -78A < 16.5mΩ < 22mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -60 ±20 -78 -55 -230 -8 -6.5 -77 296 187 93 2.1 1.3 -55 to .


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