N-Channel MOSFET
AOT412/AOB412L
100V N-Channel MOSFET SDMOS TM
General Description
The AOT412 & AOB412L are fabricated with SDMOSTM tren...
Description
AOT412/AOB412L
100V N-Channel MOSFET SDMOS TM
General Description
The AOT412 & AOB412L are fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V)
100% UIS Tested 100% Rg Tested
100V 60A < 15.8mΩ < 19.4mΩ
Top View D
TO220 Bottom View
D
Top View
TO-263 D2PAK
Bottom View
D D
G DS AOT412
S DG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS,IAR EAS,EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissip...
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