Document
ME2302D/ME2302D-G
N-Channel 20V(D-S) MOSFET,ESD Protected
GENERAL DESCRIPTION
The ME2302D is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
PIN CONFIGURATION
FEATURES
● RDS(ON)≦85mΩ@VGS=4.5V
● RDS(ON)≦115mΩ@VGS=2.5V
● RDS(ON)≦130mΩ@VGS=1.8V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Notebook ● Portable Equipment ● Load Switch ● DSC
(SOT-23) Top View
e Ordering Information: ME2302D (Pb-free)
ME2302D-G (Green product-Halogen free)
Absolute Maximum.