ME2306A-G

N-Channel 30V (D-S)MOSFET ME2306A/ME2306A-G GENERAL DESCRIPTION The ME2306A is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View FEATURES ● RDS(ON)≦32mΩ@VGS=10V ● RDS(ON)≦38mΩ@VGS=4.5V ● RDS(ON)≦50mΩ@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC ● LCD Display inverter e Ordering Information: ME2306A (Pb-free)...