N-Channel 30V (D-S)MOSFET
ME2306AS/ME2306AS-G
GENERAL DESCRIPTION
The ME2306AS is the N-Channel logic enhancement mode...
N-Channel 30V (D-S)MOSFET
ME2306AS/ME2306AS-G
GENERAL DESCRIPTION
The ME2306AS is the N-Channel logic enhancement mode power field effect
transistors, using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOT-23) Top View
FEATURES
● RDS(ON)≦32mΩ@VGS=10V
● RDS(ON)≦38mΩ@VGS=4.5V
● RDS(ON)≦50mΩ@VGS=2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC ● LCD Display inverter
Ordering Information: ME2306AS (Pb-free)...