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P-Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
The ME2307 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOT-23) Top View
ME2307/ME2307-G
FEATURES
● RDS(ON) ≦70mΩ@VGS=-10V ● RDS(ON) ≦95mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON)
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC
Ordering Information:ME2307 (Pb-free) ME2307-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage.