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ME2313-G Dataheets PDF



Part Number ME2313-G
Manufacturers Matsuki
Logo Matsuki
Description P-Channel 20V (D-S) MOSFET
Datasheet ME2313-G DatasheetME2313-G Datasheet (PDF)

P-Channel 20V(D-S) MOSFET GENERAL DESCRIPTION The ME2313 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed i.

  ME2313-G   ME2313-G


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P-Channel 20V(D-S) MOSFET GENERAL DESCRIPTION The ME2313 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View ME2313/ME2313-G BSS84 FEATURES ● RDS(ON)≦48mΩ@VGS=-10V ● RDS(ON)≦52mΩ@VGS=-4.5V ● RDS(ON)≦65mΩ@VGS=-2.5V ● RDS(ON)≦85mΩ@VGS=-1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● D.


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