N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION
The ME15N25F is the N-Channel logic enhancement mode power field effect...
N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION
The ME15N25F is the N-Channel logic enhancement mode power field effect
transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance.
PIN CONFIGURATION
ME15N25F/ME15N25F-G
FEATURES
● RDS(ON)≦220mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
(TO-220F) Top View
* The Ordering Information: ME15N25F (Pb-free)
ME15N25F-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
TC=25℃ TC=70℃
Symbol
VDS VGS
ID
Pulsed Drain Current Maximum Power Dissipation
TC=25℃ TC=70℃
IDM PD
Junction and Storage Temperature Range
Thermal Resistance-Junction ...
