ME16P10

ME16P10/ME16P10-G P- Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION The ME16P10 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench FEATURES ● RDS(ON)≦195mΩ@VGS=-10V ● RDS(ON)≦210mΩ@VGS=-4.5V technology. This high density process is especially tailored to ● Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited ● Exceptional on-resistance and maximum DC current for low voltage application such as cellular phone and notebook capability computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (TO-252-3L) Top View * The Ordering Information: ME16P10 (Pb-free) ME16P10-G (Green product-Halogen free ) Absolute Max...