ME3491D

ME3491D/ME3491D-G P-Channel 20V (D-S) MOSFET，ESD Protected GENERAL DESCRIPTION The ME3491D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TSOP-6) Top View FEATURES ● RDS(ON)≦50mΩ@VGS=-4.5V ● RDS(ON)≦65mΩ@VGS=-2.5V ● RDS(ON)≦82mΩ@VGS=-1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC Ordering Information: ME3491D (Pb-free) ME3491D-G (Gree...