N-Channel 150V(D-S) MOSFET
GENERAL DESCRIPTION
The ME3466-G is the N-Channel logic enhancement mode power field effect t...
N-Channel 150V(D-S) MOSFET
GENERAL DESCRIPTION
The ME3466-G is the N-Channel logic enhancement mode power field effect
transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOT-26) Top View
ME3466-G
FEATURES FEATURES
● RDS(ON)≦375mΩ@ VGS =10V ● RDS(ON)≦400mΩ@ VGS= 6V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
* The Ordering Information:ME3466-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
P...
