N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION
The ME35N06F is the N-Channel logic enhancement mode power field effect ...
N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION
The ME35N06F is the N-Channel logic enhancement mode power field effect
transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance.
PIN CONFIGURATION
ME35N06F/ME35N06F-G
FEATURES
● RDS(ON)≦32mΩ@VGS=10V ● RDS(ON)≦40mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
(TO-220F) Top View
* The Ordering Information: ME35N06F (Pb-free)
ME35N06F-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
TC=25℃ TC=70℃
Symbol
VDS VGS
ID
Pulsed Drain Current Maximum Power Dissipation
TC=25℃ TC=70℃
IDM PD
Operating Junction Temperature
Thermal R...
