N-Channel 60V (D-S) MOSFET
GENERAL DESCRIPTION
The ME35N06T is the N-Channel logic enhancement mode power field effect t...
N-Channel 60V (D-S) MOSFET
GENERAL DESCRIPTION
The ME35N06T is the N-Channel logic enhancement mode power field effect
transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance.
PIN CONFIGURATION
(TO-220) Top View
ME35N06T/ME35N06T-G
FEATURES
● RDS(ON)≦32mΩ@VGS=10V ● RDS(ON)≦40mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
e Ordering Information: ME35N06T (Pb-free)
ME35N06T-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25℃ TC=70℃
Pulsed Drain Current
Maximum Power Dissipation
TC=25℃ TC=70℃
Operating Junction Temperature
Thermal Resistance-Junction to Case *
...
