ME3981

ME3981/ME3981-G Dual P-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION The ME3981 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION FEATURES ● RDS(ON)≦62mΩ@VGS=-4.5V ● RDS(ON)≦80mΩ@VGS=-2.5V ● RDS(ON)≦115mΩ@VGS=-1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC ● LCD Display inverter (TSOP-6) Top ...