Dual N-Channel 30V(D-S) MOSFET
GENERAL DESCRIPTION
The ME3920-G is the Dual N-Channel logic enhancement mode power field...
Dual N-Channel 30V(D-S) MOSFET
GENERAL DESCRIPTION
The ME3920-G is the Dual N-Channel logic enhancement mode power field effect
transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
PIN CONFIGURATION
TSOP-6 Top View
ME3920-G
FEATURES FEATURES
● RDS(ON)≦24mΩ@ VGS =10V ● RDS(ON)≦46mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
* The Ordering Information:ME3920-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Note...
