MEBSS138DK/MEBSS138DK-G
N-Channel 50V (D-S) MOSFET, ESD Protection
GENERAL DESCRIPTION
The MEBSS138DK is the N-Channel ...
MEBSS138DK/MEBSS138DK-G
N-Channel 50V (D-S) MOSFET, ESD Protection
GENERAL DESCRIPTION
The MEBSS138DK is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
FEATURES
● RDS(ON)≦3.5Ω@VGS=10V
● RDS(ON)≦4Ω@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
(SOT-323) Top View
Ordering Information:MEBSS138DK (Pb-free) MEBSS138DK-G (Green product-Halogen free)
Absolute M...
